METHOD AND APPARATUS FOR CLEANING A CVD CHAMBER

摘要

The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

主权项

1. A semiconductor processing chamber, comprising:
a substrate support; a lid; a blocking plate, wherein the lid and the blocking plate define a plasma region; a gas distribution plate located between the substrate support and the blocking plate and coupled to the blocking plate, wherein the gas distribution plate and the blocking plate define a gas mixing volume, and the gas distribution plate and the substrate support define a reaction volume; and a first RF connection that couples to the lid, wherein the lid is electrically isolated from the substrate support and the blocking plate.