| 发明名称 |
Elongated Semiconductor Structure Planarization |
| 摘要 |
According to one example, a method includes epitaxially growing first portions of a plurality of elongated semiconductor structures on a semiconductor substrate, the elongated semiconductor structures running perpendicular to the substrate. The method further includes forming a gate layer on the substrate, the gate layer contacting the elongated semiconductor structures. The method further includes performing a planarization process on the gate layer and the elongated semiconductor structures, and epitaxially growing second portions of the plurality of elongated semiconductor structures, the second portions comprising a different material than the first portions. |
| 申请公布号 |
US2017125518(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201514927822 |
申请日期 |
2015.10.30 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Oxland Richard Kenneth;Duriez Blandine;Dal Mark van;Holland Martin Christopher |
| 分类号 |
H01L29/06;H01L29/66;H01L29/78;H01L21/02;H01L21/8234;H01L27/092;H01L21/321;H01L21/306 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
epitaxially growing first portions of a plurality of elongated semiconductor structures on a semiconductor substrate, the elongated semiconductor structures running perpendicular to the substrate; forming a gate layer on the substrate, the gate layer being formed over the elongated semiconductor structures; performing a planarization process on the gate layer and the elongated semiconductor structures; and epitaxially growing second portions of the plurality of elongated semiconductor structures, the second portions comprising a different material than the first portions; and after the planarization process, forming an offset in the junctions between the first portions and the second portions. |
| 地址 |
Hsin-Chu TW |
