SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

In a semiconductor device in which a plurality of light receiving elements are provided in each of a plurality of pixels that form a solid-state image sensor, a decrease in the performance of the semiconductor device is prevented, the decrease occurring due to an increase in the number of wires. In the pixel having a first photodiode and a second photodiode, a first transfer transistor coupled to the first photodiode and a second transfer transistor coupled to the second photodiode are respectively controlled by the same gate electrode, thereby allowing the number of wires for controlling the first and the second transfer transistors is reduced.

主权项

1. A semiconductor device having a solid-state image sensor provided with a pixel including a first photodiode and a second photodiode; the semiconductor device comprising:
a semiconductor substrate; the first photodiode and the second photodiode that are arrayed over an upper surface of the semiconductor substrate in an active region; a gate electrode formed over the semiconductor substrate; a first transfer transistor that has the gate electrode and transfers a charge in the first photodiode to a floating diffusion capacitance part; and a second transfer transistor that has the gate electrode and transfers a charge in the second photodiode to the floating diffusion capacitance part.