INTEGRATION OF BONDED OPTOELECTRONICS, PHOTONICS WAVEGUIDE AND VLSI SOI

摘要

An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device.

主权项

1. An optoelectronic device, comprising:
an integrated circuit including electronic devices formed on a front side of a semiconductor substrate; a barrier layer formed on a back side of the semiconductor substrate; and a photonics layer formed on the barrier layer, the photonics layer including a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core, the core configured to couple light generated from at least one component of the optoelectronic device, wherein the cladding layer is formed on the barrier layer and the core is offset from the barrier layer within the cladding layer and the cladding layer includes a thickness of greater than a wavelength of the light to be coupled in the core.