| 摘要 |
PURPOSE:To perform uniform etching having superior reproducibility by forming a ground electrode so that it has an area larger than that of a feeder electrode, specifying gas pressure in a chamber, and then inducing plasma discharge to stabilize the plasma discharge. CONSTITUTION:A ground electrode 3 having a larger area than a feeder electrode 2 is disposed in a manner to be opposed to the feeder electrode 2, and then plasma discharge is induced. This plasma is confined by means of insulating walls 1. Subsequently, a high-frequency voltage is impressed on both electrodes 2, 3 mentioned above from a capacity load 4 connected to the above feeder electrode 2 and a high-frequency electric power source 5. At this time, a specimen 6 is etched while regulating gas pressure to 0.1-5Torr. |
