METHOD OF MAKING A CAPACITOR OF DRAM MEMORY CELL

摘要

forming an insulation film on a substrate(201), and forming a first plate electrode(204) on the insulation film; forming a dielectric film(205) and a first interlayer insulation film(206) in turn; forming a contact electrode(207) of the first metal film being contact with a part of the plate electrode; exposing the partial surface of the first plate electrode(204) and the contact electrode(207) by photoetching a second interlayer insulation film(208) formed over the substrate; and forming a second plate electrode(210) and a wiring film(209) by forming the second metal film over the substrate(201) and photoetching it. The method reduces photomask formation steps to compare with conventional process.