Sulfidization of compound semiconductor surfaces and passivated mercury cadmium telluride substrates

摘要

The disclosure relates to a method of passivating mercury cadmium telluride substrates wherein a substrate surface is lapped and cleaned and then placed in an electrolyte solution containing sulfide ions to electrolytically grow a sulfide passivating layer on the lapped and cleaned surface. A preferred electrolyte solution is formed with sodium sulfide, water and ethylene glycol.