| 发明名称 | Film stack including adhesive layer | ||
| 摘要 | An example provides an apparatus including a substrate, a metal layer, and an adhesive layer adhered between the substrate and the metal layer, the adhesive layer comprising indium oxide, tin oxide, gallium oxide, indium-tin oxide, indium-gallium oxide, tin-gallium oxide, or indium-tin-gallium oxide. | ||
| 申请公布号 | US9636902(B2) | 申请公布日期 | 2017.05.02 |
| 申请号 | US201313873932 | 申请日期 | 2013.04.30 |
| 申请人 | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. | 发明人 | Abbott, Jr. James Elmer;Mardilovich Peter;Hoffman Randy |
| 分类号 | H01L41/18;B32B38/08;B41J2/16;H01L41/08;H01L41/09;B41J2/14;B32B37/12;B32B37/24;B32B38/00 | 主分类号 | H01L41/18 |
| 代理机构 | HP Inc—Patent Department | 代理人 | HP Inc—Patent Department |
| 主权项 | 1. An apparatus comprising: a substrate; a metal layer; an adhesive layer adhering the substrate and the metal layer, wherein the adhesive layer comprises an indium-tin oxide having an In:Sn atomic ratio of 9:1, wherein a first surface of the adhesive layer is in direct contact with a surface of the metal layer and a second surface of the adhesive layer is in direct contact with a surface of the substrate; and a piezoelectric layer, wherein the piezoelectric layer is directly disposed on the metal layer such that the metal layer is between the adhesive layer and the piezoelectric layer. | ||
| 地址 | Houston TX US | ||