Method for supplying vaporized precursor

摘要

A method for supplying vapor to a chamber includes providing a first diverter valve that, when open, diverts vapor away from the chamber, and a second diverter valve that, when open, supplies the vapor to the chamber; supplying a carrier gas to the chamber; after supplying the carrier gas, creating plasma in the chamber while a substrate is in the chamber; opening the first diverter valve and closing the second diverter valve; supplying the vapor by vaporizing at least one liquid precursor in a carrier gas; after a first predetermined period sufficient for the vapor to reach steady-state flow, closing the first diverter valve and opening the second diverter valve to supply the vapor to the chamber; and after a second predetermined period following the first predetermined period, opening the first diverter valve and closing the second diverter valve to stop supplying the vapor to the chamber.

主权项

1. A method for supplying vapor to a chamber in a plasma-enhanced chemical vapor deposition (PECVD) system, comprising:
providing a first diverter valve that, when open, diverts vapor away from the chamber, and a second diverter valve that, when open, supplies the vapor to the chamber; and supplying a carrier gas to the chamber; after supplying the carrier gas,
creating plasma in the chamber while a substrate is in the chamber;opening the first diverter valve and closing the second diverter valve;supplying the vapor by vaporizing at least one liquid precursor in a carrier gas;after a first predetermined period sufficient for the vapor to reach steady-state flow, closing the first diverter valve and opening the second diverter valve to supply the vapor to the chamber;after a second predetermined period following the first predetermined period, opening the first diverter valve and closing the second diverter valve to stop supplying the vapor to the chamber; andafter a third predetermined period following the second predetermined period, turning off the plasma.