Package for a surface-mount semiconductor device and manufacturing method thereof

摘要

A method for manufacturing a surface-mount electronic device includes making a first partial cut from a bottom of an assembly that includes a first semiconductor body that is disposed on a first die pad, a second semiconductor body that is disposed on a second die pad, and a plurality of terminal regions that is disposed between the first and second die pads. The first partial cut forms a recess by removing a portion of each of the terminal regions. The recess is defined by a transverse wall, a first sidewall, and a second sidewall. The first and second sidewalls and the transverse wall are coated with an anti-oxidation layer. A second partial cut is made from the top, where the second partial cut removes the transverse wall, separates the first and second semiconductor bodies, and has a width that is greater than a width of the first partial cut.

主权项

1. A method for manufacturing a surface-mount electronic device, comprising:
making a first partial cut of an assembly including at least a first die pad and at least a second die pad and a first semiconductor body and a second semiconductor body, the first semiconductor body disposed on the first die pad and the second semiconductor body disposed on the second die pad, said assembly further including a plurality of terminal regions disposed between the first and second die pads, and a dielectric region overlying the first and second semiconductor bodies and the plurality of terminal regions, each terminal region being delimited by a first region surface and by a second region surface disposed opposite the first region surface, the first region surface facing the dielectric region, said first partial cut forming a recess by removing a portion of each of said terminal regions starting from the respective second region surfaces, said recess defined by a transverse wall and a first sidewall and a second sidewall; coating the first and second sidewalls of each terminal region with an anti-oxidation layer; and making a second partial cut of the assembly starting from the dielectric region, the second partial cut removing, for each terminal region, the transverse wall and separating the first and second semiconductor bodies; and wherein said second partial cut has a width greater than a width of the first partial cut.