发明名称 Composite electronic structure with partially exposed and protruding copper termination posts
摘要 A multilayer composite electronic structure comprising feature layers extending in an X-Y plane, each adjacent pair of feature layers being separated by an inner via layer, the via layer comprising via posts that couple adjacent feature layers in a Z direction perpendicular to the X-Y plane, the via posts being embedded in an inner layer dielectric, the multilayer composite structure further comprising at least one outer layer of terminations comprising at least one copper post that is only partially embedded in an outer layer of dielectric such that part of the at least one copper post protrudes beyond surface of the outer layer of dielectric.
申请公布号 US9642261(B2) 申请公布日期 2017.05.02
申请号 US201414163084 申请日期 2014.01.24
申请人 Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. 发明人 Hurwitz Dror;Huang Alex
分类号 H05K3/40;H05K1/02 主分类号 H05K3/40
代理机构 Wiggin and Dana LLP 代理人 Wiggin and Dana LLP ;Rosenblatt Gregory S.;Hall Jonathan D.
主权项 1. A method of fabricating a multilayer composite structure comprising feature layers extending in an X-Y plane, each adjacent pair of feature layers being separated by an inner via layer comprising via posts that couple adjacent feature layers in a Z direction perpendicular to the X-Y plane, the via posts being embedded in an inner layer dielectric, the multilayer composite structure further comprising at least one outer layer of terminations comprising a two dimensional array of copper via posts that are only partially embedded in an outer layer of dielectric that extends for at least five microns beyond an outer layer of pads, such that part of each copper via post in said two-dimensional array protrudes between 5 and 50 microns beyond a surface of the outer layer of dielectric, comprising the steps of: (i) obtaining a substrate comprising alternating copper feature layers and connection via layers embedded in a dielectric; (ii) thinning away an outer layer to expose ends of a layer of copper vias; (iii) sputtering a layer of copper over the thinned surface; (iv) applying, exposing and developing a penultimate pattern of photoresist; (v) electroplating an external feature layer into the pattern; (vi) stripping away the penultimate pattern of photoresist; (vii) applying, exposing and developing an ultimate pattern of photoresist corresponding to the desired a two dimensional array of copper via posts; (viii) pattern plating copper via posts into the ultimate pattern of photoresist; (ix) stripping away the ultimate pattern of photoresist; (x) etching away the seed layer; (xi) laminating a dielectric outer layer; (xii) planarizing the dielectric outer layer; (xiv) plasma etching the dielectric outer layer to expose ends of said two dimensional array of copper via posts to a desired depth of between 5 microns and 50 microns, and (xv) applying an Organic Solder Preservative (OSP) to the copper posts.
地址 Zhuhai CN