| 发明名称 | Selective epitaxially grown III-V materials based devices | ||
| 摘要 | A first III-V material based buffer layer is deposited on a silicon substrate. A second III-V material based buffer layer is deposited onto the first III-V material based buffer layer. A III-V material based device channel layer is deposited on the second III-V material based buffer layer. | ||
| 申请公布号 | US9640622(B2) | 申请公布日期 | 2017.05.02 |
| 申请号 | US201314778574 | 申请日期 | 2013.06.28 |
| 申请人 | Intel Corporation | 发明人 | Goel Niti;Dewey Gilbert;Mukherjee Niloy;Metz Matthew V.;Radosavljevic Marko;Chu-Kung Benjamin;Kavalieros Jack T.;Chau Robert S. |
| 分类号 | H01L21/02;H01L31/102;H01L29/205;H01L29/06;H01L29/66;H01L29/78 | 主分类号 | H01L21/02 |
| 代理机构 | Blakely, Sokoloff, Taylor & Zafman LLP | 代理人 | Blakely, Sokoloff, Taylor & Zafman LLP |
| 主权项 | 1. A method to manufacture a III-V material based device, comprising: forming a trench in an insulating layer on a silicon substrate; depositing a first III-V material based buffer layer into the trench on the silicon substrate; depositing a second III-V material based buffer layer onto the first III-V material based buffer layer; and depositing a III-V material based device channel layer on the second III-V material based buffer layer. | ||
| 地址 | Santa Clara CA US | ||