MOSFET with asymmetric self-aligned contact

摘要

A semiconductor device includes a source and drain on a substrate; a first and second gate on the source, and the second gate and a third gate on the drain; a source contact over the source and between the first and second gates, the source contact including first and second portions, the first portion in contact with the source and extending between the first and second gates, and the second portion contacting the first portion and extending over the first and second gates; and a drain contact formed over the drain and between the second and third gates, the drain contact including first and second portions, the first portion contacting the drain, extending between second and third gates, and recessed with respect to the first portion of the source contact, and the second portion in contact with the first portion and extending between and over the second and third gates.

主权项

1. A method of making a semiconductor device, the method comprising:
forming a first gate, a second gate, and a third gate on a substrate, the first gate being in contact with a source, the second gate being in contact with the source and a drain, and the third gate being in contact with the drain, the source and the drain being arranged on the substrate; forming a portion of a source contact on the source, the portion of the source contact contacting the source and extending between the first gate and the second gate; forming a portion of a drain contact on the drain, the portion of the drain contact contacting the source and extending between the second gate and the third gate; and recessing the portion of the drain contact to a level below a surface of the second gate and the third gate.