发明名称 Conductive paste composition and semiconductor devices made therefrom
摘要 A conductive paste composition contains a source of an electrically conductive metal, a lead-tellurium-based oxide, a discrete oxide of an adhesion promoting element, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and lead-tellurium-based oxide.
申请公布号 US9640675(B2) 申请公布日期 2017.05.02
申请号 US201414554247 申请日期 2014.11.26
申请人 E I DU PONT DE NEMOURS AND COMPANY 发明人 Hang Kenneth Warren;Mikeska Kurt Richard;Rajendran Raj G;Torardi Carmine;Vernooy Paul Douglas;Wang Yueli
分类号 H01B1/22;H01L35/14;H01L31/0224;C03C8/10;C03C8/18;H01B1/02;H01L31/18;B23K35/26;B23K35/36;B23K35/02 主分类号 H01B1/22
代理机构 代理人
主权项 1. An article comprising a substrate and an electrically conductive structure thereon, the article having been formed by a process comprising: (a) providing a substrate having a first major surface; (b) applying a paste composition onto a preselected portion of the first major surface, wherein the paste composition comprises in admixture: an inorganic solids portion comprising: i) a source of electrically conductive metal,ii) a lead-tellurium-based oxide,iii) a discrete additive that is: (A) an oxide of a metal element selected from the group consisting of Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, and mixtures thereof, (B) a compound capable of forming such an oxide upon heating, or (C) a mixture of (A) and (B) thereof, andan organic vehicle; and (c) firing the substrate and paste composition thereon, whereby the electrically conductive structure is formed on the substrate, and wherein: the inorganic solids portion forms 85 to 95 wt. % of the total paste composition;the source of electrically conductive metal forms 95 to 99% by weight of the inorganic solids portion;a combination of lead and tellurium cations represents at least 60% of the cations in the lead-tellurium-based oxide; anda ratio of a cation percentage of lead to a cation percentage of tellurium in the lead tellurium based oxide ranges from 35:65 to 65:35.
地址 Wilmington DE US