Doping method for array substrate and manufacturing equipment of the same

摘要

A doping method for an array substrate and a manufacturing equipment. The doping method comprises: using a halftone mask to form a photoresist pattern layer on a gate insulation layer of a substrate; wherein, a polysilicon pattern layer is disposed on the substrate; the gate insulation layer covers the polysilicon pattern layer; the photoresist pattern layer corresponding to a heavily doping region forms a hollow portion; the photoresist pattern layer corresponding to a lightly doping region forms a first photoresist portion; the photoresist pattern layer corresponding to an undoped region forms a second photoresist portion; the first photoresist portion is thinner than the second photoresist portion; and performing one doping process to the polysilicon pattern layer such that the heavily doping region and the lightly doping region of the polysilicon pattern layer are formed simultaneously in order to reduce the manufacturing process of an LTPS array substrate.

主权项

1. A doping method for an array substrate, comprising:
forming a polysilicon pattern layer on a substrate; forming a gate insulation layer on the substrate having the polysilicon pattern layer; forming a gate pattern layer on the gate insulation layer; using a halftone mask to form a photoresist pattern layer on the gate insulation layer;
wherein, the gate insulation layer covers on the polysilicon pattern layer; the photoresist pattern layer corresponding to a heavily doping region of the polysilicon pattern layer forms a hollow portion; the photoresist pattern layer corresponding to a lightly doping region of the polysilicon pattern layer forms a first photoresist portion; the photoresist pattern layer corresponding to an undoped region of the polysilicon pattern layer forms a second photoresist portion; the first photoresist portion is thinner than the second photoresist portion; andwherein, the halftone mask includes a full transparent portion corresponding to the hollow portion, a semi-transparent portion corresponding to the first photoresist portion, and a non-transparent portion corresponding to the second photoresist portion; exposing the photoresist pattern layer using the halftone mask in order to form three exposure degrees of an exposed portion, a semi-exposed portion, and an unexposed portion; respectively etching the three exposure degrees in order to form the hollow portion corresponding to the exposed portion, the first photoresist portion corresponding to the semi-exposed portion, and the second photoresist portion corresponding to the unexposed portion; and performing one doping process to the polysilicon pattern layer such that the heavily doping region and the lightly doping region of the polysilicon pattern layer are formed simultaneously.