Nitride semiconductor structure and semiconductor light emitting device including the same

摘要

A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AlxInyGa1-x-yN (0

主权项

1. A nitride semiconductor structure comprising:
a first type doped semiconductor layer; a light emitting layer, comprising a multiple quantum well (MQW) structure, wherein the MQW structure comprises a plurality of barrier layers and a plurality of well layers stacked alternately; an GaN based hole supply layer comprising indium, doped with a second type dopant at a concentration larger than 1018 cm−3 and doped with carbon at a concentration larger than 1017 cm−3; an GaN based second type carrier blocking layer comprising aluminum, wherein the GaN based hole supply layer is disposed between the light emitting layer and the GaN based second type carrier blocking layer; and a second type doped semiconductor layer, wherein the GaN second type carrier blocking layer is disposed between the second type doped semiconductor layer and the light emitting layer, and the light emitting layer is disposed between the GaN second type carrier blocking layer and the first type doped semiconductor layer, wherein the GaN second type carrier blocking layer is sandwiched between the GaN based hole supply layer and the second type doped semiconductor layer.