发明名称 Matching segment circuit to which radio frequency is applied and radio frequency integrated devices using the matching segment circuit
摘要 Provided are a matching segment circuit, to which a radio frequency (RF) is applied, and an RF integrated device using the matching segment circuit. The matching segment circuit to which an RF is applied may include an input end connected to a first RF device, a parallel segment having a first capacitor and a first inductor connected in parallel, a second inductor connected to the parallel segment in series, and an output end connected to a second RF device. The first capacitor, the first inductor, and the second inductor may be configured so that an impedance of the first RF device and an impedance of the second RF device may match.
申请公布号 US9641149(B2) 申请公布日期 2017.05.02
申请号 US201514605044 申请日期 2015.01.26
申请人 Samsung Electronics Co., Ltd. 发明人 Kim Duck Hwan;Song In Sang;Kim Chul Soo;Kim Young Il;Shin Jea Shik
分类号 H03H7/38;H03H9/54 主分类号 H03H7/38
代理机构 NSIP Law 代理人 NSIP Law
主权项 1. A matching segment circuit to which a radio frequency (RF) is applied, the circuit comprising: a first matching unit; a second matching unit; and a first integrated device, connected to the first matching unit and the second matching unit, using a acoustic wave resonator (BAWR) including a first input end and a first output, wherein the first matching unit includes a second input end connected to the first output end of the first integrated device,a first segment, connected to the second input end, having at least one of capacitors and at least one of inductors, anda second output end connected to the first segment, wherein the second matching unit includes a third input end connected to the first output end of the first integrated device,a second segment, connected to the third input end, having at least one of capacitors and at least one of inductors, anda third output end connected to the second segment, and wherein the first segment and the second segment are configured so that an impedance of the first integrated device matches an impedance of at least one external RF device connected to the first matching unit and the second matching unit.
地址 Suwon-si KR