发明名称 Semiconductor package with trace covered by solder resist
摘要 The invention provides a semiconductor package. The semiconductor package includes a substrate. A first conductive trace is disposed on the substrate. A first conductive trace disposed on the substrate. A semiconductor die is disposed over the first conductive trace. A solder resist layer is formed such a portion of the solder resist layer and a portion of the first conductive trace collectively have a T-shaped cross section.
申请公布号 US9640505(B2) 申请公布日期 2017.05.02
申请号 US201514825443 申请日期 2015.08.13
申请人 MEDIATEK INC. 发明人 Lin Tzu-Hung;Huang Ching-Liou;Gregorich Thomas Matthew
分类号 H01L23/00;H01L23/31;H01L21/56;H01L23/498;H01L23/50 主分类号 H01L23/00
代理机构 McClure, Qualey & Rodack, LLP 代理人 McClure, Qualey & Rodack, LLP
主权项 1. A semiconductor package, comprising: a substrate; a plurality of first conductive traces disposed on the substrate; a semiconductor die disposed over the plurality of first conductive traces; and a solder resist layer patterned such that portions of the solder resist layer are removed over an overlapping area between the semiconductor die and the substrate such that each of the plurality of first conductive traces exhibits a covered portion, covered by the patterned solder resist layer, and an uncovered portion, not covered by the patterned solder resist layer, wherein portions of the patterned solder resist layer directly overlie and cover corresponding portions of the plurality of first conductive traces, wherein each overlying portion of the patterned solder resist layer exhibits a width extending from a first resist side wall to a second resist side wall, and each of the first conductive traces exhibits a width extending between a first trace side wall and a second trace side wall, and the width of each overlying portion of the patterned solder resist layer is wider than the width of the corresponding one of the first conductive traces over which the portion overlies, such that each overlying portion of the patterned solder resist layer and the corresponding one of the first conductive traces together exhibit a T-shaped cross section, from a side view perspective, and wherein, in plan view, the plurality of first conductive traces extend inwardly toward the semiconductor die from multiple directions.
地址 Hsin-Chu TW