| 摘要 |
The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate. |
| 主权项 |
1. A device, comprising:
a substrate, wherein the substrate comprises a silicon fin; a first dielectric layer on the substrate, wherein the first dielectric layer comprises silicon and oxygen; a second dielectric layer on the first dielectric layer, wherein the second dielectric layer comprises hafnium and oxygen; a pair of gate spacers on the substrate, wherein the gate spacers comprise a dielectric material; an NMOS metal gate electrode above the second dielectric material and between the pair of gate spacers, wherein the NMOS metal gate electrode comprises:
a first metal layer proximate the pair of gate spacers and above the second dielectric layer, wherein the first metal layer comprises aluminum, titanium and carbon;a second metal layer on the first metal layer, wherein the second metal layer comprises titanium and nitrogen; a source region proximate to one of the pair of gate spacers, and a drain region proximate the other one of the pair of gate spacers, wherein the source region and the drain region comprise an n-type dopant; a first contact coupled to the source region, wherein the first contact comprises a tungsten material above a first barrier layer; and a second contact coupled to the drain region, wherein the second contact comprises a tungsten material above a second barrier layer. |
