| 摘要 |
In a plasma processing apparatus, first to third RF power monitors 94, 94 and 98 are configured to monitor high frequency powers (progressive wave powers), which propagate on first to third high frequency power supply lines 88, 90 and 92 from first to third high frequency power supplies 36, 38 and 40 toward a load side, respectively, and high frequency powers (reflection wave powers), which propagate on the first high frequency power supply lines 88, 90 and 92 from the load side toward the first to third high frequency power supplies 36, 38 and 40, respectively, at the same time. A main controller 82 is configured to control the high frequency power supplies 36, 38 and 40 and matching devices 42, 44 and 46 based on monitoring information sent from RF power monitors 94, 96 and 98. |
| 主权项 |
1. A plasma processing apparatus, comprising:
an evacuable processing vessel configured to accommodate therein a processing target substrate loaded thereinto or unloaded therefrom; a first electrode configured to mount and hold thereon the processing target substrate within the processing vessel; a second electrode provided to face the first electrode within the processing vessel; a processing gas supply unit configured to supply a processing gas into the processing vessel; a first high frequency power supply configured to output a first high frequency power having a first frequency; a first high frequency power supply line through which the first high frequency power outputted from the first high frequency power supply is transmitted to the first electrode or the second electrode; a first reflection wave power measurement unit configured to measure a power of a reflection wave propagating on the first high frequency power supply line in a backward direction from the first electrode or the second electrode toward the first high frequency power supply; a second high frequency power supply configured to output a second high frequency power having a second frequency lower than the first frequency; a second high frequency power supply line through which the second high frequency power outputted from the second high frequency power supply is transmitted to the first electrode; a second reflection wave power measurement unit configured to measure a power of a reflection wave propagating on the second high frequency power supply line in a backward direction from the first electrode toward the second high frequency power supply; a third high frequency power supply configured to output a third high frequency power for attracting ions into the processing target substrate on the first electrode from plasma, the third high frequency power having a third frequency lower than the second frequency; a third high frequency power supply line through which the third high frequency power outputted from the third high frequency power supply is transmitted to the first electrode; a third reflection wave power measurement unit configured to measure a power of a reflection wave propagating on the third high frequency power supply line in a backward direction from the first electrode toward the third high frequency power supply; and a controller configured to control the first high frequency power supply, the second high frequency power supply and the third high frequency power supply, based on a first reflection wave power measurement signal, a second reflection wave power measurement signal and a third reflection wave power measurement signal obtained by the first reflection wave power measurement unit, the second reflection wave power measurement unit and the third reflection wave power measurement unit, respectively. |
