Transistors having strained channel under gate in a recess

摘要

Some embodiments include a construction having a second semiconductor material over a first semiconductor material. A region of the second semiconductor material proximate the first semiconductor material has strain due to different lattice characteristics of the first and second semiconductor materials. A transistor gate extends downwardly into the second semiconductor material. Gate dielectric material is along sidewalls and a bottom of the transistor gate. Source/drain regions are along the sidewalls of the transistor gate, and the gate dielectric material is between the source/drain regions and the transistor gate. A channel region extends between the source/drain regions and is under the bottom of the transistor gate. At least some of the channel region is within the strained region.

主权项

1. A semiconductor construction, comprising:
a first semiconductor material; a second semiconductor material over the first semiconductor material and having a strained region proximate the first semiconductor material due to different lattice characteristics of the first and second semiconductor materials; a transistor gate extending downwardly into the second semiconductor material; gate dielectric material along sidewalls and a bottom of the transistor gate; source/drain regions along the sidewalls of the transistor gate, the gate dielectric material being between the source/drain regions and the transistor gate; wherein a channel region extends between the source/drain regions and under the bottom of the transistor gate, at least some of the channel region being within the strained region; and wherein the source/drain regions are less deep than the transistor gate within the second semiconductor material.