Semiconductor device processing method for material removal

摘要

A method of removing at least a portion of a layer of material from over a semiconductor substrate that can include dispensing an etching solution over the semiconductor substrate to form a pool of etching solution on the layer of material, wherein a footprint of the pool of etching solution is less than a footprint of the semiconductor substrate. The pool of etching solution and the semiconductor substrate can be moved with respect to each other. A pool boundary of the pool of etching solution can be defined on the semiconductor substrate with at least one air-knife such that the pool of etching solution etches the layer of material over the semiconductor substrate within the footprint of the pool of etching solution. The etching solution and at least a portion of the layer of material etched by the etching solution can be removed with the at least one air-knife.

主权项

1. A method of removing material from a semiconductor device, comprising:
providing a semiconductor substrate comprising a length L, a first surface, and a second surface opposite the first surface; forming a layer of material over the first surface of the semiconductor substrate; providing a conveyor; providing a first air-knife disposed over the conveyor; providing a second air-knife disposed over the conveyor and offset from the first air-knife by a distance D that is less than the length L of the semiconductor substrate; placing the semiconductor substrate on the conveyor with the layer of material oriented facing away from the conveyor, the semiconductor substrate being placed on the conveyor before the first air-knife and before the second air-knife; advancing the semiconductor substrate along the conveyor and under the first air-knife so that a portion of the semiconductor substrate is disposed between the first air-knife and the second air-knife; forming a pool of etching solution by dispensing an etching solution onto the layer of material over the portion of the semiconductor substrate disposed between the first air-knife and the second air-knife; etching a portion of the layer of material disposed between the first air-knife and the second air-knife with the pool of etching solution; and removing the pool of etching solution and at least a portion of the layer of material etched by the pool of etching solution from the surface of the semiconductor substrate by moving the semiconductor substrate along the conveyor and past the second air-knife.