发明名称 |
HIGH DYNAMIC RANGE IMAGE SENSOR |
摘要 |
The present disclosure relates to an image sensor including: a plurality of pixels, each including a first photodiode coupled to a first capacitive charge storage node by a first transistor, and a second photodiode coupled to a second capacitive charge storage node by a second transistor; and a control circuit configured so as to, during a phase of acquisition of a value representative of the illumination level of a pixel: acquire a first output value representative of the illumination level received by the first photodiode during a first uninterrupted integration period; and acquire a second output value representative of the illumination level received by the second photodiode during a second integration period divided into a plurality of separate sub-periods. |
申请公布号 |
US2017118424(A1) |
申请公布日期 |
2017.04.27 |
申请号 |
US201615051545 |
申请日期 |
2016.02.23 |
申请人 |
STMicroelectronics (Grenoble 2) SAS |
发明人 |
Lule Tarek;Chossat Jérôme;Deschamps Benoît |
分类号 |
H04N5/353;H01L27/146;H04N5/355 |
主分类号 |
H04N5/353 |
代理机构 |
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代理人 |
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主权项 |
1. An image sensor comprising:
a plurality of pixels, each pixel of the plurality of pixels including, respectively, a first photodiode, a first transistor coupling the first photodiode to a first capacitive charge storage node, a second photodiode, and a second transistor coupling the second photodiode to a second capacitive charge storage node; and a control circuit configured to, during a phase of acquisition of a value representative of an illumination level of a pixel:
acquire a first output value representative of an illumination level received by the first photodiode during a first uninterrupted integration period; andacquire a second output value representative of an illumination level received by the second photodiode during a second integration period, the second integration period including a plurality of separate sub-periods. |
地址 |
Grenoble FR |