FIN CUT WITHOUT RESIDUAL FIN DEFECTS

摘要

A method of forming semiconductor fins is provided. Sacrificial fins are provided on a surface of substrate. A hard mask layer, formed around the sacrificial fins and the gaps therebetween, is made coplanar with a topmost surface of the sacrificial fins. A fin cut mask then covers a portion of the sacrificial fins and partly covers a sacrificial fin. Trenches are formed in the hard mask layer by removing sacrificial fins not covered by the fin cut mask and that portion of the sacrificial fin not partly covered by the fin cut mask. Spacers are formed on the sidewalls of the trenches and a plug is formed in the trench formed by removing that portion of the sacrificial fin not partly covered by the fin cut mask. Semiconductor fins are grown epitaxially in the trenches having the spacers from the exposed surface of the substrate upward.

主权项

1. A method of forming semiconductor fins comprising:
providing an array of sacrificial fins having gaps therebetween on a surface of semiconductor substrate; forming a hard mask layer on the surface of the sacrificial fins and in the gaps; providing a fin cut mask on the hard mask layer to cover a portion of the sacrificial fins and partly cover at least one sacrificial fin; forming trenches in the hard mask to expose the surface of the semiconductor substrate by selectively removing the sacrificial fins not covered by the fin cut mask and by selectively removing the portion of the at least one sacrificial fin not partly covered by the fin cut mask; removing the fin cut mask and forming spacers on the sidewalls of the trenches and forming a plug in the trench formed by the removal of the portion of the at least one sacrificial fin not partly covered by the fin cut mask; and growing semiconductor fins in the trenches having the spacers on the sidewalls from the exposed surface of the semiconductor substrate upward.