| 发明名称 |
Method For Compensating for an Exposure Error, a Device Manufacturing Method, a Substrate Table, a Lithographic Apparatus, a Control System, a Method for Measuring Reflectivity and a Method for Measuring a Dose of EUV Radiation |
| 摘要 |
A method for compensating for an exposure error in an exposure process of a lithographic apparatus that comprises a substrate table, the method comprising: obtaining a dose measurement indicative of a dose of IR radiation that reaches substrate level, wherein the dose measurement can be used to calculate an amount of IR radiation absorbed by an object in the lithographic apparatus during an exposure process; and using the dose measurement to control the exposure process so as to compensate for an exposure error associated with the IR radiation absorbed by the object during the exposure process. |
| 申请公布号 |
US2017115578(A1) |
申请公布日期 |
2017.04.27 |
| 申请号 |
US201515311548 |
申请日期 |
2015.04.24 |
| 申请人 |
ASML Netherlands B.V. |
发明人 |
BERENDSEN Christianus Wilhelmus Johannes;BECKERS Marcel;CASTELIJNS Henricus Jozef;GERAETS Hubertus Antonius;KOEVOETS Adrianus Hendrik;LEVASIER Leon Martin;SCHAAP Peter;STREEFKERK Bob;TROMP Siegfried Alexander |
| 分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
obtaining a dose measurement indicative of a dose of IR radiation that reaches substrate level, wherein the dose measurement is used to calculate an amount of IR radiation absorbed by an object in an lithographic apparatus during an exposure process; and using the dose measurement to control the exposure process so as to compensate for an exposure error associated with the IR radiation absorbed by the object during the exposure process. |
| 地址 |
Veldhoven NL |
