| 发明名称 |
SYSTEMS AND METHODS TO COMPENSATE FOR THRESHOLD VOLTAGE SHIFTS |
| 摘要 |
A data storage device includes a memory including multiple storage elements. The data storage device also includes circuitry configured to determine, for a particular storage element of the multiple storage elements, an indicator associated with a threshold voltage temperature dependence (TVTD) of the particular storage element. |
| 申请公布号 |
US2017117053(A1) |
申请公布日期 |
2017.04.27 |
| 申请号 |
US201514924339 |
申请日期 |
2015.10.27 |
| 申请人 |
SANDISK TECHNOLOGIES INC. |
发明人 |
Sharon Eran;Alrod Idan;Dutta Deepanshu |
| 分类号 |
G11C16/34;G06F11/10;G11C29/52;G11C11/56 |
主分类号 |
G11C16/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A data storage device comprising:
a memory including multiple storage elements; and circuitry configured to determine, for a particular storage element of the multiple storage elements, an indicator associated with a threshold voltage temperature dependence (TVTD) of the particular storage element. |
| 地址 |
Plano TX US |
