SEMICONDUCTOR DEVICE AND ERROR CORRECTION METHOD

摘要

A device with error correction is provided. The device includes a plurality of memory cells, and reference read write circuit, a plurality of sense amplifiers, and an error-correction code control block. The reference read write circuit is configured to generate a reference voltage in response to data stored in at least one of the plurality of memory cells. A plurality of sense amplifiers are each coupled to a respective memory cell of the plurality of memory cells. An error-correction code (ECC) control block may output an error signal when the ECC control block detects that it is unable to correct error data in one or more respective memory cells. The reference read write circuit may overwrite data in the at least one of the plurality of memory cells in response to the error signal.

主权项

1. A semiconductor device comprising:
a plurality of memory cells; a reference read write circuit coupled to at least one of the plurality of memory cells and configured to generate a reference voltage in response to data stored in the at least one of the plurality of memory cells; a plurality of sense amplifiers each coupled to a respective memory cell of the plurality of memory cells, the respective memory cells different from the at least one of the plurality of memory cells, wherein the reference read write circuit and each of the sense amplifiers are configured to amplify data of each respective memory cell based on the reference voltage; and an error-correction code (ECC) control block coupled to the sense amplifiers and configured to output an error signal when the ECC control block detects that it is unable to correct error data in one or more respective memory cells; wherein the reference read write circuit is configured to overwrite data in the at least one of the plurality of memory cells in response to the error signal.