| 发明名称 |
THREE DIMENSIONAL NON-VOLATILE MEMORY WITH CURRENT SENSING PROGRAMMING STATUS |
| 摘要 |
A non-volatile memory system includes a plurality of non-volatile memory cells, one or more control circuits that perform programming of the memory cells, a power supply line that provides a supply used to program the memory cells, and a current measurement circuit. The current measurement circuit senses an indication of current on the power supply line. The one or more control circuits determine whether the programming of the memory cells is successful based on the indication of current. |
| 申请公布号 |
US2017117035(A1) |
申请公布日期 |
2017.04.27 |
| 申请号 |
US201615299338 |
申请日期 |
2016.10.20 |
| 申请人 |
SANDISK TECHNOLOGIES LLC |
发明人 |
Mokhlesi Nima;Al-Shamma Ali |
| 分类号 |
G11C11/56;G11C16/08;G11C16/04;G11C16/34 |
主分类号 |
G11C11/56 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus, comprising:
a plurality of non-volatile memory cells; one or more control circuits connected to the memory cells and configured to perform programming of the memory cells; a power supply line connected to the one or more control circuits, the power supply line configured to provide a power supply to program the memory cells; and a current measurement circuit connected to the one or more control circuits, the current measurement circuit configured to sense an indication of current on the power supply line, the one or more control circuits configured to determine whether the programming of the memory cells is successful based on comparing the indication of current to a reference. |
| 地址 |
Plano TX US |
