发明名称 Integration of a replica circuit and a transformer above a dielectric substrate
摘要 A particular device includes a replica circuit disposed above a dielectric substrate. The replica circuit includes a thin film transistor (TFT) configured to function as a variable capacitor or a variable resistor. The device further includes a transformer disposed above the dielectric substrate and coupled to the replica circuit. The transformer is configured facilitate an impedance match between the replica circuit and an antenna.
申请公布号 US9634645(B2) 申请公布日期 2017.04.25
申请号 US201313829784 申请日期 2013.03.14
申请人 QUALCOMM Incorporated 发明人 Lan Je-Hsiung;Lo Chi Shun;Kim Jonghae;Velez Mario Francisco;Hong John H.
分类号 H03H11/28;H01L23/522;H01L27/13;H01L49/02;H01L23/64;H01L27/12;H01L23/66;H01F19/08;H01F27/28 主分类号 H03H11/28
代理机构 Toler Law Group, PC 代理人 Toler Law Group, PC
主权项 1. A device comprising: a replica circuit disposed above a single dielectric substrate formed of a glass-type material, wherein the replica circuit comprises a thin film transistor (TFT) configured to function as a variable capacitor or a variable resistor; and a transformer disposed above the single dielectric substrate and coupled to the replica circuit, wherein the transformer is configured to facilitate an impedance match between the replica circuit and an antenna, the transformer comprising a vertical-coupling hybrid transformer (VHT), and the VHT comprising: a first inductor structure disposed above a top surface of the single dielectric substrate;a second inductor structure disposed above the top surface of the single dielectric substrate and disposed above the first inductor structure; anda dielectric layer, wherein the dielectric layer is disposed between the first inductor structure and the second inductor structure.
地址 San Diego CA US