Method for producing an electrical terminal support

摘要

The invention relates to a method for producing an electrical terminal support for an optoelectronic semiconductor body, comprising the following steps: providing a carrier assembly (1), which comprises a carrier body (11), an intermediate layer (12) arranged on an outer surface (111) of the carrier body (11), and a use layer (13) arranged on the intermediate layer (12); introducing at least two openings (4), which are mutually spaced in the lateral direction (L), in the use layer (13) via an outer surface (131) of the use layer (13), wherein the openings extend completely through the use layer (13) in the vertical direction (V); electrically insulating lateral surfaces (41) of the openings (4) and of the outer face (131) of the use layer (13); arranging electrically conductive material (6) at least in the openings (4), wherein after completion of the terminal carrier (100), the electrically conductive material (6) has an interruption (U) in the progression thereof along the outer surface (131) of the use layer (13) in the lateral direction (L) between adjoining openings (4).

主权项

1. A method for producing an electrical terminal support for an optoelectronic semiconductor body comprising the following steps:
providing a support arrangement having a support body, an intermediate layer arranged on an outer surface of the support body, and a self-supporting utility layer arranged on an outer surface of the intermediate layer facing away from the support body, wherein the utility layer is formed with at least one of the materials Si, AIN, GaN, Ge, GaAs or contains at least one of the materials; introducing at least two openings arranged in a manner spaced apart from one another in a lateral direction into the utility layer via an outer surface of the utility layer facing away from the support body, wherein the openings extend completely through the utility layer in a vertical direction; electrically insulating side surfaces of the openings and the outer surface of the utility layer facing away from the support body by an oxidation method, such that the material of the utility layer is surface-oxidized; arranging electrically conductive material at least in places in the openings; arranging at least one protective diode structure in the utility layer, wherein the protective diode structure is electrically interconnected with the semiconductor body; and after arranging the electrically conductive material, removing the support body and the intermediate layer, wherein the protective diode structure is integrated in the utility layer and does not project from the utility layer in a vertical direction facing away from the support body, wherein after the terminal support has been completed, the electrically conductive material has at least one interruption in its course along the outer surface of the utility layer in the lateral direction between adjacent openings.