发明名称 |
Methods of providing dielectric to conductor adhesion in package structures |
摘要 |
Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a CVD dielectric material on a package dielectric material, and then forming a conductive material on the CVD dielectric material. |
申请公布号 |
US9633837(B2) |
申请公布日期 |
2017.04.25 |
申请号 |
US201514830681 |
申请日期 |
2015.08.19 |
申请人 |
Intel Corporation |
发明人 |
Raghunathan Vinodhkumar;Andideh Ebrahim |
分类号 |
H01L23/532;H01L21/02;H01L21/768;H01L23/498;H01L21/48;H01L23/538 |
主分类号 |
H01L23/532 |
代理机构 |
Blakely, Sokoloff, Taylor & Zafman LLP |
代理人 |
Blakely, Sokoloff, Taylor & Zafman LLP |
主权项 |
1. A method of forming a package structure comprising:
forming a first CVD dielectric material on a first dielectric material; forming openings in the first CVD dielectric material; forming openings in the first dielectric material; forming conductive material in the openings and over at least a portion of a top surface of the first CVD dielectric; and depositing a second CVD dielectric material over the conductive material, wherein the second CVD dielectric material contacts a sidewall surface and a top surface of the conductive material, and wherein at least a portion of the conductive material remains in contact with the top surface of the first CVD dielectric. |
地址 |
Santa Clara CA US |