发明名称 Methods of providing dielectric to conductor adhesion in package structures
摘要 Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a CVD dielectric material on a package dielectric material, and then forming a conductive material on the CVD dielectric material.
申请公布号 US9633837(B2) 申请公布日期 2017.04.25
申请号 US201514830681 申请日期 2015.08.19
申请人 Intel Corporation 发明人 Raghunathan Vinodhkumar;Andideh Ebrahim
分类号 H01L23/532;H01L21/02;H01L21/768;H01L23/498;H01L21/48;H01L23/538 主分类号 H01L23/532
代理机构 Blakely, Sokoloff, Taylor & Zafman LLP 代理人 Blakely, Sokoloff, Taylor & Zafman LLP
主权项 1. A method of forming a package structure comprising: forming a first CVD dielectric material on a first dielectric material; forming openings in the first CVD dielectric material; forming openings in the first dielectric material; forming conductive material in the openings and over at least a portion of a top surface of the first CVD dielectric; and depositing a second CVD dielectric material over the conductive material, wherein the second CVD dielectric material contacts a sidewall surface and a top surface of the conductive material, and wherein at least a portion of the conductive material remains in contact with the top surface of the first CVD dielectric.
地址 Santa Clara CA US
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