| 发明名称 | Method to improve cantilever process performance | ||
| 摘要 | A method of manufacturing a cantilever structure includes providing a semiconductor substrate, forming a recess in the semiconductor substrate, forming a sacrificial layer in the recess, forming a cantilever structure layer on the semiconductor substrate and the sacrificial layer, performing an etching process to remove a portion of the cantilever structure layer until a surface of the sacrificial layer is exposed to form a cantilever structure and an opening, and removing a portion of the sacrificial layer to form a void below the cantilever structure so that the cantilever structure is suspended in the void. The cantilever structure thus formed has good morphological properties to ensure that the cantilever structure is free of residues at the bottom and has excellent suspension even if the width of the cantilever structure is relatively large. | ||
| 申请公布号 | US9630833(B2) | 申请公布日期 | 2017.04.25 |
| 申请号 | US201514864851 | 申请日期 | 2015.09.24 |
| 申请人 | Semiconductore Manufacturing International (Shanghai) Corporation | 发明人 | Ni Liang;Wang Xinxue |
| 分类号 | H01L21/00;B81C1/00 | 主分类号 | H01L21/00 |
| 代理机构 | Kilpatrick Townsend and Stockton LLP | 代理人 | Kilpatrick Townsend and Stockton LLP |
| 主权项 | 1. A method of manufacturing a semiconductor device, comprising: providing a semiconductor substrate; forming a recess in the semiconductor substrate; forming a sacrificial layer comprising germanium in the recess; forming a cantilever structure layer on the semiconductor substrate and the sacrificial layer; performing an etching process to remove a portion of the cantilever structure layer until a surface of the sacrificial layer is exposed to form a cantilever structure and an opening; removing a portion of the sacrificial layer using a corrosion solution containing hydrogen peroxide to form a void below the cantilever structure so that cantilever structure is suspended in the void. | ||
| 地址 | Shanghai CN | ||