发明名称 |
Silicon nitride substrate and silicon nitride circuit board using the same |
摘要 |
A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m·K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio (T2/T1) of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with a front and a rear surfaces of the substrate is 20% or less. The dielectric strength mean value of the silicon nitride substrate can be 15 kV/mm or more. According to above structure, there can be obtained a silicon nitride substrate and a silicon nitride circuit board using the substrate in which variation in the dielectric strength is decreased. |
申请公布号 |
US9630846(B2) |
申请公布日期 |
2017.04.25 |
申请号 |
US201415027829 |
申请日期 |
2014.10.21 |
申请人 |
Kabushiki Kaisha Toshiba;Toshiba Materials Co., Ltd. |
发明人 |
Nakayama Noritaka;Aoki Katsuyuki;Sano Takashi |
分类号 |
C04B35/584;C01B21/068;H01L23/15;H01L23/373;H05K1/03;H05K1/02;C04B35/587;C04B35/593;H01L23/498 |
主分类号 |
C04B35/584 |
代理机构 |
Burr & Brown, PLLC |
代理人 |
Burr & Brown, PLLC |
主权项 |
1. A silicon nitride substrate comprising silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50W/m·K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio, T2/T1, of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, an average grain diameter with respect to a long diameter of the silicon nitride crystal grains is between 1.5 and 10 μm, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with front and rear surfaces of the substrate is 20% or less. |
地址 |
Tokyo JP |