GAS-PHASE DEPOSITION PROCESS

摘要

The disclosure relates to a layer-deposition process that includes: injecting a first reagent in gaseous phase into the deposition chamber via a first injection path, and injecting a second gas-phase reagent into the deposition chamber via a second injection path, the second injection path being separate from the first injection path. The pressure in the deposition chamber is greater than a predetermined value for the entire duration of the process. The process is characterized in that the first reagent is fed into the deposition chamber according to a first pulse sequence, and the second reagent is fed into the chamber according to a second pulse sequence. The first pulse sequence and the second pulse sequence are out of phase with one another.

主权项

1. A method for gas phase deposition of a layer by reaction between two reagents on the surface of a substrate placed in a deposition chamber, the method comprising:
injecting a first reagent in a gas phase into the deposition chamber through a first injection route; injecting a second reagent in a gas phase into the deposition chamber through a second injection route, the second injection route being distinct from the first injection route;wherein a pressure in the deposition chamber is greater than 500 mTorr during the whole duration of the method and the first reagent is introduced into the deposition chamber according to a first sequence of pulses, the second reagent is introduced into the deposition chamber according to a second sequence of pulses, the first sequence of pulses and the second sequence of pulses being phase-shifted.