| 发明名称 |
TiN Hard Mask And Etch Residual Removal |
| 摘要 |
Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility. |
| 申请公布号 |
US2017107460(A1) |
申请公布日期 |
2017.04.20 |
| 申请号 |
US201615138835 |
申请日期 |
2016.04.26 |
| 申请人 |
Air Products and Chemicals, Inc. |
发明人 |
Liu Wen Dar;Lee Yi-Chia;Casteel, JR. William Jack;Chen Tianniu;Agarwal Rajiv Krishan;Rao Madhukar Bhaskara |
| 分类号 |
C11D11/00;C11D3/43;C11D3/30;C11D3/20;C11D3/33;H01L21/02;C11D3/00;C11D3/37;H01L21/311;H01L21/033;H01L21/768;C11D3/39;C11D3/28 |
主分类号 |
C11D11/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A composition for selectively removing PVD titanium nitride (TiN or TiNxOy; where x=0 to 1.3 and y=0 to 2) from a semiconductor device comprising the PVD titanium nitride and a second material selected from the group consisting of Cu, Co, CVD titanium nitride, dielectric material, low-k dielectric material, and combinations thereof, the composition comprising:
1 to 20 wt % peroxide, 1-5 wt % base, 0.1-1 wt % weak acid, 0.5 to 2 wt % ammonium salt, 25 to 5000 ppm corrosion inhibitor or 1-15 wt % of a long chain or mixed alkylammonium hydroxide, 10 to 5000 ppm, long chain organic amine or polyalkylamine, and the rest is solvent,wherein the composition has a pH ranging from 7 to 11.5. |
| 地址 |
Allentown PA US |
