SEMICONDUCTOR DEVICES AND FABRICATING METHODS THEREOF

摘要

Provided are semiconductor devices and fabricating methods thereof. The semiconductor device includes a field insulating layer formed in a substrate, an interlayer dielectric layer formed on the field insulating layer and including a trench exposing at least a portion of the field insulating layer, a deposition insulating layer formed in the trench to be disposed on the field insulating layer, a gate insulating layer formed the trench to be disposed on the deposition insulating layer, and a metal gate formed the trench on the gate insulating layer.

主权项

1. A semiconductor device comprising:
a first fin on a substrate; a field insulating layer disposed on a portion of sidewalls of the first fin and on the substrate; an interlayer dielectric layer on the field insulating layer and including a trench exposing at least a portion of the field insulating layer; a spacer on a sidewall of the trench; a deposition insulating layer on the spacer in the trench and on the portion of the field insulating layer; a gate insulating layer in the trench and on the deposition insulating layer therein; and a metal gate on the gate insulating layer in the trench, wherein a first height from the field insulating layer to the top surface of the first fin is smaller than a second height of a first elevated source/drain.