SELECTIVE BOTTOM-UP METAL FEATURE FILLING FOR INTERCONNECTS

摘要

A method for selective bottom-up filling of recessed features with a low resistivity metal for semiconductor devices is described in several embodiments. The method includes providing a substrate containing a patterned dielectric layer having a recessed feature with dielectric layer surfaces and a metal-containing surface on a bottom of the recessed feature, reacting the dielectric layer surfaces with a reactant gas containing a hydrophobic functional group to form hydrophobic dielectric layer surfaces, and at least substantially filling the recessed feature with a metal in a bottom-up gas phase deposition process that hinders deposition of the metal on the hydrophobic dielectric layer surfaces. According to one embodiment, the metal is selected from the group consisting of ruthenium (Ru), cobalt (Co), aluminum (Al), iridium (Ir), iridium (Ir), rhodium (Rh), osmium (Os), palladium (Pd), platinum (Pt), nickel (Ni), and a combination thereof.

主权项

1. A method of forming a semiconductor device, the method comprising:
providing a substrate containing a patterned dielectric layer having a recessed feature with dielectric layer surfaces and a metal-containing surface on a bottom of the recessed feature; reacting the dielectric layer surfaces with a reactant gas containing a hydrophobic functional group to form hydrophobic dielectric layer surfaces; and at least substantially filling the recessed feature with a metal in a bottom-up gas phase deposition process that hinders deposition of the metal on the hydrophobic dielectric layer surfaces.