SEMICONDUCTOR DEVICES INCLUDING INSULATING MATERIALS IN FINS

摘要

Semiconductor devices are provided. A semiconductor device includes a first insulating material in a first fin. The semiconductor device includes a second insulating material in a second fin. The first and second insulating materials have different respective sizes. For example, in some embodiments, the first and second insulating materials have different respective widths and/or depths in the first and second fins, respectively.

主权项

1. A semiconductor device comprising:
a first substrate region and a second substrate region: a first fin protruding from the first substrate region and comprising a first recess comprising a first cross-sectional area that is defined by a first width and a first depth; a first isolation layer in the first recess; a first source/drain region adjacent at least one side of the first recess and spaced apart from the first isolation layer; a second fin protruding from the second substrate region and comprising a second recess comprising a second cross-sectional area that is defined by a second width and a second depth and is smaller than the first cross-sectional area; a second isolation layer in the second recess; and a second source/drain region adjacent at least one side of the second recess and spaced apart from the second isolation layer.