| 发明名称 |
METHOD OF DICING A WAFER AND SEMICONDUCTOR CHIP |
| 摘要 |
A method of dicing a wafer may include forming a plurality of active regions in a wafer, each active region including at least one electronic component, the active regions extending from a first surface of the wafer into the wafer by a height and being separated by separation regions, forming at least one trench in the wafer by plasma etching in at least one separation region from the first surface of the wafer. The at least one trench is extending into the wafer farther than the plurality of active regions. The method may further include processing a remaining portion of the wafer in the separation region to separate the wafer into individual chips. |
| 申请公布号 |
US2017110371(A1) |
申请公布日期 |
2017.04.20 |
| 申请号 |
US201615390767 |
申请日期 |
2016.12.27 |
| 申请人 |
Infineon Technologies AG |
发明人 |
BRUNNBAUER Markus;DRUMMER Bernhard;KASPAR Korbinian;MACKH Gunther |
| 分类号 |
H01L21/78;H01L21/268;H01L21/304;H01L21/683;H01L21/3065 |
主分类号 |
H01L21/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of dicing a wafer, the method comprising:
forming a plurality of active regions in the wafer, each active region comprising at least one electronic component, the active regions extending from a first surface of the wafer into the wafer by a height and being separated by separation regions; forming at least one trench in the wafer by plasma etching in at least one separation region from the first surface of the wafer, wherein the at least one trench is extending into the wafer farther than the plurality of active regions; and processing a remaining portion of the wafer in the at least one separation region to separate the wafer into individual chips, wherein the processing the remaining portion of the wafer comprises at least one of laser ablating, laser stealth dicing, and sawing. |
| 地址 |
Neubiberg DE |
