发明名称 |
CRYSTAL PULLING SYSTEMS AND METHODS FOR PRODUCING MONOCRYSTALLINE INGOTS WITH REDUCED EDGE BAND DEFECTS |
摘要 |
A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones. |
申请公布号 |
US2017107639(A1) |
申请公布日期 |
2017.04.20 |
申请号 |
US201615297853 |
申请日期 |
2016.10.19 |
申请人 |
SunEdison Semiconductor Limited (UEN201334164H) |
发明人 |
Basak Soubir;Samanta Gaurab;Daggolu Parthiv;Meyer Benjamin Michael;Luter William L.;Ryu Jae Woo;Gitlin Eric Michael |
分类号 |
C30B15/20;C30B29/06;C30B15/22 |
主分类号 |
C30B15/20 |
代理机构 |
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代理人 |
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主权项 |
1. A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material, the system comprising:
a crucible for containing the melt of semiconductor or solar-grade material; a pulling mechanism configured to pull the ingot from the melt along a pull axis; and a multi-stage cooling system configured to cool the ingot at different cooling rates as the ingot is pulled from the melt by the pulling mechanism, the cooling system including:
an annular heat shield positioned concentric with the crucible and defining an elongate passage for receiving the ingot; anda multi-stage heat exchanger positioned within the passage defined by the heat shield, the heat exchanger including a fluid-cooled housing defining a central passage for receiving the ingot, the housing having an upper portion and a lower portion spaced vertically from the upper portion by an annular gap. |
地址 |
Singapore SG |