发明名称 CRYSTAL PULLING SYSTEMS AND METHODS FOR PRODUCING MONOCRYSTALLINE INGOTS WITH REDUCED EDGE BAND DEFECTS
摘要 A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.
申请公布号 US2017107639(A1) 申请公布日期 2017.04.20
申请号 US201615297853 申请日期 2016.10.19
申请人 SunEdison Semiconductor Limited (UEN201334164H) 发明人 Basak Soubir;Samanta Gaurab;Daggolu Parthiv;Meyer Benjamin Michael;Luter William L.;Ryu Jae Woo;Gitlin Eric Michael
分类号 C30B15/20;C30B29/06;C30B15/22 主分类号 C30B15/20
代理机构 代理人
主权项 1. A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material, the system comprising: a crucible for containing the melt of semiconductor or solar-grade material; a pulling mechanism configured to pull the ingot from the melt along a pull axis; and a multi-stage cooling system configured to cool the ingot at different cooling rates as the ingot is pulled from the melt by the pulling mechanism, the cooling system including: an annular heat shield positioned concentric with the crucible and defining an elongate passage for receiving the ingot; anda multi-stage heat exchanger positioned within the passage defined by the heat shield, the heat exchanger including a fluid-cooled housing defining a central passage for receiving the ingot, the housing having an upper portion and a lower portion spaced vertically from the upper portion by an annular gap.
地址 Singapore SG