PHOTOMASK FOR FORMING MULTIPLE LAYER PATTERNS WITH A SINGLE EXPOSURE

摘要

The present disclosure provides one embodiment of a mask for a lithography exposure process. The mask includes a mask substrate; a first mask material layer patterned to have a first plurality of openings that define a first layer pattern; and a second mask material layer patterned to have a second plurality of openings that define a second layer pattern.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
providing a mask, wherein the mask includes:
a first mask material layer over a mask substrate and patterned to have a first plurality of openings that define a first layer pattern; anda second mask material layer over the first mask material layer and patterned to have a second plurality of openings that define a second layer pattern; providing a target substrate having a first photoresist layer and a second photoresist layer over the first photoresist layer; and performing a lithography exposure by patterning a radiation beam using the provided mask, wherein the first layer pattern is formed on to the first photoresist layer and the second layer pattern is formed on the second photoresist layer.