METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING REDUCED ON-STATE RESISTANCE AND STRUCTURE

摘要

A semiconductor device includes a singulated region of semiconductor material having a first major surface and a second major surface opposite to the first major surface. In one embodiment, the second major surface includes a recessed surface portion bounded by opposing sidewall portions extending outward from the region of semiconductor material in cross-sectional view. The sidewall portions have outer surfaces defining peripheral edge segments of the singulated region of semiconductor material. An active device region is disposed adjacent to the first major surface and a first conductive layer is disposed adjoining the recessed surface portion. The recessed surface portion provides a semiconductor device having improved electrical characteristics, and the sidewall portions provide a semiconductor device that is less susceptible to warpage, breakage, and other reliability issues.

主权项

1. A semiconductor device comprising:
a singulated region of semiconductor material having a first major surface and a second major surface opposite to the first major surface, the second major surface comprising a recessed surface portion bounded by opposing sidewall portions extending outward from the singulated region of semiconductor material in cross-sectional view, the sidewall portions having outer surfaces defining peripheral edge segments of the singulated region of semiconductor material, the sidewall portions further comprising inner surfaces opposite to the outer surfaces; and an active device region disposed adjacent to the first major surface.