发明名称 |
ZIRCONIUM, HAFNIUM, TITANIUM PRECURSORS AND DEPOSITION OF GROUP 4 CONTAINING FILMS USING THE SAME |
摘要 |
Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L2-M-C5R4-[(ER2)2—NR]—, wherein M is Ti, Zr, or Hf bonded in an η5 bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or a C1-C4 hydrocarbon group; and each L is independently a −1 anionic ligand selected from the group consisting of NR′2, OR′, Cp, amidinate, β-diketonate, or keto-iminate, wherein R′ is a H or a C1-C4 hydrocarbon group and adjacent R's may be joined to form a hydrocarbyl ring; provided that at least one R on the Cp is C1 to C4. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes. |
申请公布号 |
US2017107623(A1) |
申请公布日期 |
2017.04.20 |
申请号 |
US201615396159 |
申请日期 |
2016.12.30 |
申请人 |
L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude |
发明人 |
KIM Daehyeon;GATINEAU Satoko;NOH Wontae;GATINEAU Julien;GIRARD Jean-Marc |
分类号 |
C23C16/513;C23C16/455;C07F7/00 |
主分类号 |
C23C16/513 |
代理机构 |
|
代理人 |
|
主权项 |
1. A Group 4 transition metal-containing film forming composition comprising a Group 4 transition metal precursor having the formula L2-M-C5R4-[(ER2)2—NR]— referring to the following structure formula: wherein M is Ti, Zr, or Hf bonded in an η5 bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or a C1-C4 hydrocarbon group; and each L is independently a −1 anionic ligand; provided that at least one R on the Cp is C1 to C4. |
地址 |
Paris FR |