发明名称 |
SEMICONDUCTOR PACKAGE ASSEMBLY WITH THROUGH SILICON VIA INTERCONNECT |
摘要 |
The invention provides a semiconductor package assembly with a TSV interconnect. The semiconductor package assembly includes a first semiconductor package mounted on a base, having: a semiconductor die, a semiconductor substrate, and a first array of TSV interconnects and a second array of TSV interconnects formed through the semiconductor substrate, wherein the first array and second array of TSV interconnects are separated by an interval region. The assembly further includes a second semiconductor die mounted on the first semiconductor package, having a ground pad thereon. One of the TSV interconnects of the first semiconductor package has a first terminal coupled to the ground pad of the second semiconductor die and a second terminal coupled to an interconnection structure disposed on a front side of the semiconductor substrate. |
申请公布号 |
US2017110406(A1) |
申请公布日期 |
2017.04.20 |
申请号 |
US201615393387 |
申请日期 |
2016.12.29 |
申请人 |
MediaTek Inc. |
发明人 |
YANG Ming-Tzong;HUNG Cheng-Chou;HUANG Wei-Che;HUANG Yu-Hua;LIN Tzu-Hung;CHAN Kuei-Ti;WU Ruey-Beei;WU Kai-Bin |
分类号 |
H01L23/538;H01L25/065;H01L23/498;H01L23/00;H01L21/768;H01L23/48 |
主分类号 |
H01L23/538 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor package assembly with a through silicon via (TSV) interconnect, comprising:
a first semiconductor package mounted on a base, comprising: a semiconductor die; a semiconductor substrate; and a first array of TSV interconnects and a second array of TSV interconnects formed through the semiconductor substrate, wherein the first array and second array of TSV interconnects are separated by an interval region; a second semiconductor die mounted on the first semiconductor package, having a ground pad thereon, wherein one of the TSV interconnects of the first semiconductor package has a first terminal coupled to the ground pad of the second semiconductor die and a second terminal coupled to an interconnection structure disposed on a front side of the semiconductor substrate. |
地址 |
Hsin-Chu TW |