Semiconductor device

摘要

Disclosed is a semiconductor device having a first transistor and a second transistor over the first transistor. The first transistor includes a first semiconductor, and the second transistor includes an oxide semiconductor that is different from the first semiconductor. A gate of the first transistor is electrically connected to a source or drain electrode of the second transistor. The second transistor has a semiconductor layer including the oxide semiconductor over the source and drain electrodes and a gate electrode over the semiconductor layer with an insulating layer therebetween.

主权项

1. A semiconductor device comprising:
a first transistor comprising a first gate electrode; and a second transistor comprising a second gate electrode, a third gate electrode, a source electrode, a drain electrode, and a semiconductor layer, wherein:
the source electrode is over and in contact with the first gate electrode;the semiconductor layer is over and in contact with the source electrode and the drain electrode;the second gate electrode is over the semiconductor layer;the third gate electrode is provided in the same layer as the first gate electrode; andthe semiconductor layer comprises:
a first oxide semiconductor layer over and in contact with the source electrode and the drain electrode;a second oxide semiconductor layer over and in contact with the first oxide semiconductor layer; anda third oxide semiconductor layer over and in contact with the second oxide semiconductor layer.