Deposition of metal doped amorphous carbon film

摘要

Embodiments of the present disclosure relate to a metal-doped amorphous carbon hardmask for etching the underlying layer, layer stack, or structure. In one embodiment, a method of processing a substrate in a processing chamber includes exposing a substrate to a gas mixture comprising a carbon-containing precursor and a metal-containing precursor, reacting the carbon-containing precursor and the metal-containing precursor in the processing chamber to form a metal-doped carbon layer over a surface of the substrate, forming in the metal-doped carbon layer a defined pattern of through openings, and transferring the defined pattern to an underlying layer beneath the metal-doped carbon layer using the metal-doped carbon layer as a mask. An etch hardmask using the inventive metal-doped amorphous carbon film provides reduced compressive stress, high hardness, and therefore higher etch selectivity.

主权项

1. A method of processing a substrate in a processing chamber, comprising:
exposing a substrate to a gas mixture comprising a hydrocarbon-containing precursor and a metal-containing precursor; thermally reacting the hydrocarbon-containing precursor and the metal-containing precursor in the processing chamber to form a metal-doped amorphous carbon layer over a surface of the substrate; forming in the metal-doped amorphous carbon layer a defined pattern of through openings; and transferring the defined pattern to an underlying layer beneath the metal-doped amorphous carbon layer using the metal-doped amorphous carbon layer as a mask.