Calculation method for local film stress measurements using local film thickness values

摘要

A system and method for local film stress calculation is disclosed. The method may include specifying a plurality of measurement points on a substrate, the substrate being configured to receive a film deposition; obtaining a local film thickness measurement for each measurement point; obtaining a local wafer shape parameter for each measurement point; and calculating a local film stress value for each measurement point based on the local film thickness measurement and the local wafer shape parameter for each corresponding measurement point. The method may further include specifying a plurality of estimation points on the substrate; obtaining a local wafer shape parameter for each estimation point; calculating an estimated local film thickness for each estimation point; and calculating a local film stress value for each estimation point based on the estimated local film thickness and the local wafer shape parameter for each corresponding estimation point.

主权项

1. A method, comprising:
specifying a plurality of discrete measurement points on a substrate, the substrate being configured to receive a film deposition; measuring a pre-deposition local thickness individually for each of said plurality of discrete measurement points utilizing at least one thickness measurement apparatus; measuring a pre-deposition local wafer shape parameter individually for each of said plurality of discrete measurement points utilizing at least one wafer shape measurement apparatus; measuring a post-deposition local film thickness individually for each of said plurality of discrete measurement points utilizing at least one thickness measurement apparatus when a film is deposited on the substrate by a wafer process equipment; measuring a post-deposition local wafer shape parameter individually for each of said plurality of discrete measurement points utilizing at least one wafer shape measurement apparatus when the film is deposited on the substrate by the wafer process equipment; calculating, utilizing a computer processor, a local film stress value individually for each of said plurality of discrete measurement points, wherein at least two of said plurality of discrete measurement points have different local film thickness values, and wherein each local film stress value is calculated based on the pre-deposition and post-deposition local film thickness measurements and the pre-deposition and post-deposition local wafer shape parameters obtained for each corresponding measurement point; and monitoring operations of the wafer process equipment based on the local film stress value calculated for the plurality of discrete measurement points.