Dielectric repair for emerging memory devices

摘要

Systems and method include providing a non-volatile random access memory (NVRAM) stack including a plurality of layers. The plurality of layers includes a dielectric layer and a metal layer. The metal layer of the NVRAM stack is patterned. The patterning causes damage to lateral side portions of the dielectric layer. The lateral portions of the dielectric layer are repaired by depositing dielectric material on the lateral side portions of the dielectric layer.

主权项

1. A method comprising:
providing a non-volatile random access memory (NVRAM) stack including a plurality of layers, wherein the plurality of layers includes a dielectric layer and a metal layer; patterning the metal layer of the NVRAM stack, wherein the patterning causes damage to lateral side portions of the dielectric layer that are recessed relative to the metal layer; and repairing the lateral portions of the dielectric layer by depositing dielectric material on the lateral side portions of the dielectric layer that are recessed using a deposition process that chemically selectively deposits the dielectric material, with the metal layer exposed to the deposition process, on the side portions of the dielectric layer relative to sidewalls of the metal layer.