发明名称 Wiring structure, thin film transistor array substrate including the same, and display device
摘要 In a wiring conversion part which connects a lower conductive film to a first conductive film each functioning as a wiring, a first transparent conductive film is formed into a pattern in which it covers an end surface of the first conductive film, and an angle formed at a corner part in a portion of the first transparent conductive film making contact with a lower first insulating film (outside a width of the first conductive film) is larger than 90 degrees and smaller than 270 degrees or the corner part has an arc shape. A second transparent conductive film is connected to the lower conductive film and the first transparent conductive film, and the first transparent conductive film is connected to the first conductive film, so that the lower conductive film and the first conductive film are electrically connected to each other.
申请公布号 US9627585(B2) 申请公布日期 2017.04.18
申请号 US201313781404 申请日期 2013.02.28
申请人 Mitsubishi Electric Corporation 发明人 Okumoto Kazunori
分类号 H01L23/48;H01L23/52;H01L29/40;H01L33/42;H01L27/12 主分类号 H01L23/48
代理机构 Studebaker & Brackett PC 代理人 Studebaker & Brackett PC
主权项 1. A wiring structure comprising: a first insulating film; a first conductive film formed on and over said first insulating film; and a first transparent conductive film formed on and over said first conductive film, wherein said first transparent conductive film covers at least one part of an end surface of said first conductive film and extends from the end surface toward the first insulating film to make contact with the first insulating film, and an angle formed at a corner part of said first transparent conductive film in a region where said first transparent conductive film makes contact with said first insulating film is larger than 90 degrees and smaller than 270 degrees or the corner part has an arc shape.
地址 Tokyo JP