发明名称 |
Integrated circuit having strained fins on bulk substrate and method to fabricate same |
摘要 |
A method includes forming a set of fins composed of a first semiconductor material. The method further heats the set of fins to condense the fins and cause growth of a layer of oxide on vertical sidewalls thereof, masking a first sub-set of the fins, forming a plurality of voids in the oxide by removing a second sub-set of fins, where each void has a three-dimensional shape and dimensions that correspond to a three dimensional shape and dimensions of a corresponding removed fin from the second sub-set, and epitaxially growing in the voids a third sub-set of fins. The third sub-set of fins is composed of a second semiconductor material that differs from the first semiconductor material. Each fin of the third subset has a three dimensional shape and dimensions of a corresponding removed fin from the second sub-set. At least one structure formed by the method is also disclosed. |
申请公布号 |
US9627267(B2) |
申请公布日期 |
2017.04.18 |
申请号 |
US201615144136 |
申请日期 |
2016.05.02 |
申请人 |
International Business Machines Corporation |
发明人 |
Balakrishnan Karthik;Cheng Kangguo;Hashemi Pouya;Reznicek Alexander |
分类号 |
H01L21/00;H01L21/8238;H01L29/165;H01L27/092;H01L29/78 |
主分类号 |
H01L21/00 |
代理机构 |
Harrington & Smith |
代理人 |
Harrington & Smith ;Percello Louis J. |
主权项 |
1. A method, comprising:
forming a set of fins in a top portion of a semiconductor layer; heating the set of fins to cause condensation of the fins, wherein a concentration of a first constituent semiconductor material of the set of fins is increased, and to also cause growth of an oxide from a second constituent semiconductor material of the set of fins at least on vertical side surfaces of the fins of the first set of fins; masking a first sub-set of the set of fins and forming a plurality of voids in the oxide by removing a second sub-set of the set of fins, each void having a three-dimensional shape and dimensions that correspond to a three dimensional shape and dimensions of a corresponding removed fin from the second sub-set of fins; and epitaxially growing in the voids a third sub-set of fins, the third sub-set of fins being comprised of a semiconductor material that differs from at least one of the first constituent semiconductor material and the second constituent semiconductor material, where each fin of the third subset of fins has a three dimensional shape and dimensions of a corresponding removed fin from the second sub-set of fins. |
地址 |
Armonk NY US |